Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the same

An integrated circuit device comprising:

• a package substrate comprising a connection terminal;
• a semiconductor structure comprising a semiconductor substrate stacked on the package substrate;
• a TSV structure passing through the semiconductor substrate of the semiconductor structure;
• and
• at least one decoupling capacitor formed in the semiconductor substrate of the semiconductor structure and connected to the TSV structure,
• wherein the TSV structure comprises:
• a conductive plug connected to the connection terminal;
• a first conductive barrier layer spaced apart from the conductive plug and surrounding the conductive plug;
• and
• a first insulating thin film disposed between the conductive plug and the first conductive barrier layer, and
• wherein the at least one decoupling capacitor comprises:
• a first electrode formed of the same material as a first material of the first conductive barrier layer;
• a second electrode spaced apart from the first electrode and formed of the same material as a second material of at least a part of the conductive plug;
• and
• a second insulating thin film disposed between the first electrode and the second electrode and formed of the same material as a third material of the first insulating thin film.

An integrated circuit device comprising:

• a semiconductor substrate;
• a through-silicon via (TSV) structure formed through the semiconductor substrate comprising a conductive plug and a conductive barrier layer;
• and
• one or more decoupling capacitors formed in the semiconductor substrate and connected to the TSV structure within a keep out zone (KOZ) around the TSV structure;
• and
• one or more conductive layers configured to maintain the conductive plug and the conductive barrier layer isopotential to each other when a voltage is applied to the TSV structure.