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US 2015/0028428 A1Published application
III-V Semiconductor Device with Interfacial Layer
AssigneesKatholieke Universiteit Leuven, KU LEUVEN R&D, Imec Vzw
InventorsHan Chung Lin, Laura Nyns, Tsvetan Ivanov, Dennis Van Dorp
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Abstract
A semiconductor structure comprises a substrate including a III-V material, and a high-k interfacial layer overlaying the substrate. The interfacial layer includes a rare earth aluminate. The present disclosure also relates to an n-type FET device comprising the same, and a method for manufacturing the same.
Claims18
A semiconductor structure comprising:
- substrate comprising a III-V material;
- and
- high-k interfacial layer overlaying the substrate,
- wherein the interfacial layer comprises a rare earth aluminate.
1 more element
Dependencies are inferred from the claim text.