Optoelectronic semiconductor device

An optoelectronic semiconductor device comprising:

• at least one radiation-emitting and/or radiation-receiving semiconductor chip comprising a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface comprises a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures,
• a reflective sheath surrounding the at least one semiconductor chip at least in sections, and
• a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections, wherein
• a conversion element is disposed on the radiation passage surface of the semiconductor chip which converts the radiation, is emitted by the semiconductor chip, at least partially into radiation of a different wavelength, the conversion element not being covered by the reflective sheath.