Thin film transistor array substrate and manufacturing method thereof, and liquid crystal display device and manufacturing method thereof
AssigneeMitsubishi Electric Corporation
InventorsToshihiko IWASAKA, Makoto HIRAKAWA
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Abstract
Source wires having a semiconductor film thereunder are formed wide within a range that does not overlap pixel electrodes formed later. Thereafter, a resist pattern for use in patterning the pixel electrodes is formed so as to overlap edge portions of the source wires, and etching using the resist pattern as a mask is performed, whereby the pixel electrodes are formed, and in addition, the edge portions of the source wires are removed, whereby a structure in which the semiconductor film has a portion projecting beyond the source wires on both sides is formed.
Claims12
A thin film transistor array substrate having a thin film transistor, the thin film transistor array substrate comprising:
- a gate electrode of said thin film transistor and a gate wire connected to said gate electrode, said gate electrode and said gate wire being formed on a substrate;
- a gate insulating film that covers said gate electrode and said gate wire;
- a semiconductor film formed on said gate insulating film;
- a source electrode and a drain electrode of said thin film transistor formed on said semiconductor film above said gate electrode;
- a source wire connected to said source electrode, said source wire being formed on said gate insulating film;
- a pixel electrode formed by being partially and directly stacked on said drain electrode;
- an interlayer insulating film that covers said source electrode, said drain electrode, said source wire and said pixel electrode;
- and
- a counter electrode arranged opposite to said pixel electrode with said interlayer insulating film being interposed therebetween, wherein
- said semiconductor film is provided under said drain electrode, said source electrode and said source wire, and in a region between said source electrode and said drain electrode, and
- said semiconductor film under said source wire has a portion projecting beyond said source wire on both sides, the width of the portion being 1 μm or more.
A manufacturing method of a thin film transistor array substrate having a thin film transistor, the manufacturing method comprising the steps of:
- (a) forming a gate electrode of said thin film transistor and gate wire connected to said gate electrode by depositing and patterning a first metal film on a substrate;
- (b) forming a gate insulating film that covers said gate electrode and said gate wire;
- (c) depositing a semiconductor film, an ohmic contact film and a second metal film in this order on said gate insulating film;
- (d) patterning said semiconductor film, said ohmic contact film and said second metal film, and forming a source electrode and a drain electrode in a state of being connected to each other on a region which becomes a channel region of said thin film transistor, and a source wire connected to said source electrode;
- (e) depositing a first transparent conductive film on said source electrode and said drain electrode in said state of being connected to each other and on said source wire;
- (f) patterning said first transparent conductive film to form a pixel electrode, and removing said first transparent conductive film on an edge portion of said source wire by etching with a resist pattern in which at least a region that becomes said channel region and a region including the edge portion of said source wire are opened;
- (g) separating said source electrode and said drain electrode from each other and removing the edge portion of said source wire by etching said second metal film exposed by patterning said first transparent conductive film by using, as a mask, the same resist pattern as in said step (f) or said first transparent conductive film patterned in said step (f);
- (h) exposing said semiconductor film located under the region which becomes said channel region and the edge portion of said source wire by removing said ohmic contact film by using, as a mask, the same resist pattern as in said step (f) or said first transparent conductive film patterned in said step (f);
- (i) forming an interlayer insulating film that covers said pixel electrode, said source wire and said thin film transistor;
- and
- (j) forming a counter electrode at a position opposite to said pixel electrode by depositing and patterning said second transparent conductive film on said interlayer insulating film.
Dependencies are inferred from the claim text.