Thin film transistor, thin film transistor substrate and method of manufacturing thin film transistor substrate
AssigneeYe Xin Technology Consulting Co., Ltd.
InventorANJO KENJI
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Abstract
A thin film transistor includes a gate electrode, a channel layer, a source electrode, and a drain electrode. The channel layer is made of an amorphous oxide semiconductor. The channel layer includes one high oxygen ion concentration region, or two high oxygen ion concentration regions one above the other. An oxygen ion density of each high oxygen ion concentration region is in a range of from about 1×1018 to about 1×1021 per cubic centimeter. A thin film transistor substrate and a method of manufacturing the thin film transistor substrate are also provided.
Claims19
A thin film transistor comprising:
- a gate electrode;
- a channel layer above and insulated from the gate electrode, the channel layer made of an amorphous oxide semiconductor and comprising at least one high oxygen ion concentration region having an oxygen ion density in a range of from about ×1018 to about 1×1021 per cubic centimeter;
- and
- a source electrode and a drain electrode formed at two opposite sides of the channel layer and symmetrical about the gate electrode, the source electrode and the drain electrode insulated from the gate electrode.
A thin film transistor substrate comprising:
- a substratum;
- a gate electrode on the substratum;
- a channel layer above the gate electrode, the channel layer made of an amorphous oxide semiconductor and comprising at least one high oxygen ion concentration region having an oxygen ion density in a range of from about 1×1018 to about 1×1021 per cubic centimeter;
- a first insulating layer formed between the gate electrode and the channel layer;
- a source electrode and a drain electrode formed at two opposite sides of the channel layer and symmetrical about the gate electrode;
- and
- a second insulating layer formed on the first insulating layer and covering the source electrode, the channel layer and the drain electrode.
A method of manufacturing a thin film transistor substrate, the method comprising:
- providing a substratum;
- forming a gate electrode on the substratum;
- forming a first insulating layer on the substratum, the first insulating layer covering the gate electrode;
- forming a channel layer on the first insulating layer corresponding to the gate electrode, the channel layer made of an amorphous oxide semiconductor;
- forming a metal layer on the first insulating layer, the metal layer covering the channel layer;
- forming a photoresist layer on the metal layer;
- forming a source electrode and a drain electrode by patterning the photoresist layer and etching the metal layer, the source electrode and the drain electrode formed at two opposite sides of the channel layer and symmetrical about the gate electrode;
- implanting oxygen ions into a portion of the channel layer not covered by the source electrode and the drain electrode, thereby forming at least one high oxygen ion concentration region in the channel layer, the at least one high oxygen ion concentration region having an oxygen ion density in a range of from about 1×1018 to about 1×1021 per cubic centimeter;
- removing the photoresist layer;
- and
- forming a second insulating layer on the first insulating layer, the source electrode, the channel layer and the drain electrode.
Dependencies are inferred from the claim text.