Pattern forming method and mask pattern data

A pattern forming method, comprising:

• forming a mask substrate comprising a guide layer on a target film, the guide layer including a base layer and a neutralization film with a plurality of parallel line sections;
• applying a polymer material on the guide layer, the polymer material containing a first polymer segment and a second polymer segment;
• heating the polymer material to microphase separate the polymer material forming a self-assembly pattern having a plurality of first polymer portions containing the first polymer segment and extending in a direction of the line sections, and a plurality of second polymer portions containing the second polymer segment alternating with the first polymer portions and extending along the direction of the line sections;
• and
• selectively removing the second polymer portions,
• wherein the widths of line sections at ends of the plurality of line sections of the neutralization film are about two times the width of each first polymer portion or each second polymer portion.

A pattern forming method, comprising:

• forming a base layer on a processing target film;
• forming a neutralization film on the base layer;
• forming a resist pattern on the neutralization film;
• performing an etching process using the resist pattern as a mask to process the neutralization film and form a guide layer having a plurality of line sections parallel to each other;
• coating the guide layer with a polymer material containing first polymer segments and second polymer segments;
• heating the polymer material to microphase separate the polymer material forming a self-assembly pattern having a plurality of first polymer portions containing the first polymer segment and extending in a direction of the line sections, and a plurality of second polymer portions containing the second polymer segment alternating with the first polymer portions and extending along the direction of the line sections;
• forming a resist film to cover the self-assembly pattern;
• performing an etching process using the resist film as a mask to remove a mixed polymer outside of the self-assembly pattern;
• and
• selectively removing the second polymer portions,
• wherein the widths of line sections at both ends of the plurality of line sections of the neutralization film are about two times the width of each first polymer portion or each second polymer portion,
• an interval between neighboring line sections is an odd multiple of the width of each first polymer portion or each second polymer portion,
• the widths of line sections of the plurality of line sections in a central area of the neutralization film other are about three times or about five times the width of each first polymer portion or each second polymer portion, and
• on both ends of the line sections of, one first polymer portion and one second polymer portion are formed such that the second polymer portion is positioned outside of the first polymer portion.