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US 2014/0370703 A1Published application
TSV Front-top Interconnection Process
AssigneeNational Center for Advanced Packaging Co., Ltd.
InventorsFengwei Dai, Daquan Yu
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Abstract
A TSV front-top interconnection process is provided. In an embodiment of the present invention, the stress concentration area of a TSV copper pillar is eliminated, which reduces the possibility of generating delamination or cracks between an insulating layer and the substrate due to stress. Meanwhile, the defect of the existing process that the TSV copper pillar may expose after an electroplating and annealing process is re-used to achieve the interconnection between the TSV copper pillar and the metal redistribution layer.
Claims10
A TSV front-ends interconnection process, comprising:
- etching a TSV on a substrate;
- preparing an insulating layer on the inner wall of the TSV and on the substrate surface;
- electroplating the TSV and the surface of the insulating layer to form a TSV copper pillar;
- implementing a chemical mechanical polishing process to remove a specific thickness of the substrate including the TSV copper pillar;
- annealing the TSV copper pillar to make the TSV copper pillar expose a certain height from the substrate;
- preparing a passivation layer on the surface of the substrate and the TSV copper pillar;
- removing certain part of the passivation layer to make the top of the TSV copper pillar expose from the passivation layer.
4 more elements
Dependencies are inferred from the claim text.