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US 2014/0370664 A1Published application
Word line and bit line processing for cross-point memories
OwnerKiran Pangal, Khaled Hasnat +1inventors
InventorsKiran Pangal, Khaled Hasnat, Shafqat Ahmed
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Abstract
Techniques for fabricating cross-point memory devices are disclosed in which word line (WL) and/or bit line (BL) processing is separate from cross-point memory memory-material processing, thereby providing an advantageous increase in thickness of the WL and/or BL metal that avoids an increase in the WL and BL resistances as feature sizes for cross-point memories scale smaller.
Claims20
A method for forming a cross-point memory device, the method comprising:
- forming a first metal layer on a substrate;
- forming a memory-material layer on the first metal layer;
- etching the memory-material layer to have a desired pattern and a desired aspect ratio;
- forming a second metal layer to a desired thickness on the etched memory-material layer;
- and
- etching the second metal layer to match the desired pattern of the etched memory-material layer, the etching of the second metal layer being separate from the etching of the memory-material layer.
3 more elements
A method, comprising:
- forming a first metal layer for a cross-point memory device to a first desired thickness on a substrate;
- forming a memory-material layer on the first metal layer;
- etching the memory-material layer to have a desired pattern and a desired aspect ratio;
- forming a second metal layer to a second desired thickness on the etched memory-material layer, the first desired thickness of the first metal layer and the second desired thickness of the second metal layer being selected together to form a predetermined amount of resistance provided by the first and second metal layers;
- and
- etching the second metal layer to match the desired pattern of the etched memory material, the etching of the second metal layer being separate from the etching of the memory-material layer.
3 more elements
A method for forming a cross-point memory device, the method comprising:
- forming a memory-material layer on a word line metal layer;
- etching the memory-material layer to have a desired pattern and a desired aspect ratio;
- forming a bit line metal layer to a desired thickness on the etched memory-material layer;
- and
- etching the bit line metal layer to match the desired pattern of the etched memory-material layer, the etching of the bit line metal layer being separate from the etching of the memory-material layer.
2 more elements
Dependencies are inferred from the claim text.