Method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsSunao AYA, Shozo SHIKAMA, Hideaki YUKI
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Abstract
A method for manufacturing a semiconductor device includes a photolithography process having steps of a developing solution immersing process. The steps of the developing solution immersing process includes step (a) of dropping a developing solution on a silicon carbide semiconductor substrate and forming a developing solution film so as to have a film thickness of more than 6 μm and step (b) of reducing the film thickness of the developing solution film to 6 μm or less.
Claims7
A method for manufacturing a semiconductor device, comprising a photolithography process, wherein said photolithography process includes a developing solution immersing process, and
- said developing solution immersing process includes the steps of:
- (a) dropping a developing solution on a semiconductor substrate and forming a developing solution film so as to have a film thickness of more than 6 μm;
- and
- (b) reducing the film thickness of said developing solution film to 6 μm or less.
Dependencies are inferred from the claim text.