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US 2014/0369109 A1Published application
Semiconductor memory device and memory system including the same
AssigneeSK hynix Inc.
InventorsYo-Sep LEE, Jung-Hyun KIM
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Abstract
A semiconductor memory device includes a plurality of word lines each of which are connected to a plurality of memory cells, a row control unit suitable for sequentially activating and precharging a word line corresponding to a target address and a predetermined (N) number of adjacent word lines during a target activation mode, and a mode exit control unit suitable for counting the number of activation operations by the row control unit during the target activation mode to determine whether or not to exit from the target activation mode.
Claims22
A semiconductor memory device comprising:
- a plurality of word lines each of which are connected to a plurality of memory cells;
- a row control unit suitable for sequentially activating and precharging a word line corresponding to a target address and a predetermined (N) number of adjacent word lines during a target activation mode;
- and
- a mode exit control unit suitable for counting the number of activation operations by the row control unit during the target activation mode to determine whether or not to exit from the target activation mode.
1 more element
A memory system comprising:
- a memory controller suitable for transmitting a mode register set (MRS) setting signal or a target activation command for entry into a target activation mode, active and precharge commands for performing activation and precharge operations, and a source address for selecting the word lines, wherein the source address is classified as a target address of which activation-precharge history satisfies a predetermined condition and a normal address of which activation-precharge history does not satisfy the predetermined condition;
- and
- a semiconductor memory device suitable for entering the target activation mode in response to the MRS setting signal or the target activation command, sequentially activating and precharging a target word line corresponding to the target address and a predetermined (N) number of adjacent word lines during the target activation mode, and exiting from the target activation mode by counting the number of activation operations.
Dependencies are inferred from the claim text.