US 2014/0360429 A1 · GAS BARRIER ELEMENT FOR PECVD REACTORS

Abstract

This disclosure relates to plasma processing for photovoltaic device manufacturing. Particularly to a plasma processing system that includes an electrode that allows gas to pass through into the process chamber that includes a substrate. A gas barrier component may be used to minimize parasitic plasma occurring at the edges of the electrode by preventing process gas reaching the edge of the chamber or from entering the process chamber by going around the electrode. The gas barrier component may be made of a non-conductive flexible material that forms a fluidic seal between the electrode and the chamber. In other embodiments, the gas barrier may also support isolation grids that are disposed opposite of the electrode and prevent the isolation grids from moving.

Claims20

Dependent claims

A system, comprising:

RF electrode comprising:
a power connector that is configured to be coupled to a radio frequency power generator;
and
a plurality of holes that each have an opening on at least two sides of the electrode such that a gas can flow through one or more of the holes;
a ground component that surrounds a portion of the electrode;
a gas plenum that is formed between the electrode and ground component that can store the gas that can flow through the one or more holes of the electrode;
a non-conductive gas barrier disposed between a portion of the electrode and a portion of the ground component and that forms a fluid seal between the gas plenum the RF electrode;
a voltage dampening grid in the gas plenum that is coupled to the non-conductive gas barrier, and that increases the electrical isolation between the electrode and the ground component.

5 more elements

A plasma processing system, comprising:

a ground component comprising at least one ground pass-through for gas that is used to generate plasma;
a electrode that is mechanically suspended from the ground component and electrically insulated from the ground component, and comprises:
a perimeter that is no more than 6 mm. away from a surface of the ground component;
and
at least one electrode pass-through for the gas to a plasma processing region configured for substrates comprising a surface area of at least 1 m2;
an insulating material disposed between the perimeter of the electrode and the surface of the ground component, the insulating material forming a gas flow resistant seal between the electrode and the ground component;
and
one or more voltage dampening components suspended between the ground component and the electrode by, at least, the insulating material.

5 more elements

Dependencies are inferred from the claim text.

Gas barrier element for pecvd reactors

Life of this patent

Gas barrier element for pecvd reactors

Life of this patent

Abstract

Claims20