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US 2014/0349461 A1Published application
Method for using metal bilayer
AssigneeNanya Technology Corporation
InventorsVassil Antonov, Vishwanath Bhat, Chris Carlson
Life of this patent
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Abstract
A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.
Claims10
A method for using a metal bilayer, comprising:
- providing a bottom electrode;
- providing a dielectric layer disposed on and in direct contact with said lower electrode;
- providing a metal bilayer which serves as a top electrode in a capacitor, said metal bilayer disposed on and in direct contact with said dielectric layer, wherein said metal bilayer consists of a noble metal in direct contact with said dielectric layer and a metal nitride in direct contact with said noble metal.
Dependencies are inferred from the claim text.