Enhanced Performance Active Pixel Array and Epitaxial Growth Method for Achieving the Same

A method of forming an emissive imager device surrounded by streets, the emissive imager device consisting of an array of light emitting areas separated by electrically inactive areas formed on a laterally overgrown compound semiconductor layer wherein:

• the compound semiconductor layer consists of gallium nitride, aluminum nitride, indium nitride, gallium arsenide, gallium phosphide, aluminum arsenide, indium phosphide, indium arsenide, or alloys thereof;
• the laterally overgrown compound semiconductor layer is grown, in whole or in part, via a lateral epitaxial overgrowth or sidewall lateral epitaxial overgrowth process that utilizes a mask;
• the mask window geometry for the lateral epitaxial overgrowth or sidewall lateral epitaxial overgrowth process utilizes one or more of the electrically inactive areas of the compound semiconductor layer as windows or protrusions for sidewall growth, respectively;
• the mask window geometry for the lateral epitaxial overgrowth or sidewall lateral epitaxial overgrowth process is selected to yield an average threading dislocation density in the light emitting areas of less than approximately 1×109 cm−2;
• growing light emitting layers upon the laterally overgrown compound semiconductor layer;
• forming the light emitting areas from the light emitting layers.