Plasma Doping Of Silicon-Containing Films
OwnerVictor Nguyen, Mihaela Balseanu +4inventors
InventorsVictor Nguyen, Mihaela Balseanu, Li-Qun Xia, Ning Li, Martin A. Hilkene, Matthew D. Scotney-Castle
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Abstract
Provided are methods for the deposition and doping of films comprising Si. Certain methods involve depositing a SiN, SiO, SiON, SiC or SiCN film and doping the Si-containing film with one or more of C, B, O, N and Ge by a plasma implantation process. Such doped Si-containing films may have improved properties such as reduced etch rate in acid-based clean solutions, reduced dielectric constant and/or improved dielectric strength.
Claims20
A method of depositing a film on a substrate, the method comprising:
- depositing a Si-containing film on the substrate, wherein the Si-containing film is selected from the group consisting of SiN, SiO, SiON, SiC and SiCN;
- and
- doping the Si-containing film with one or more of dopants selected from C, B, O, N and Ge via a plasma implantation process to provide a doped film.
A method of depositing a film on a substrate, the method comprising:
- depositing a Si-containing film on the substrate, wherein the Si-containing film is selected from the group consisting of SiN, SiO, SiON, SiC and SiCN;
- and
- exposing the Si-containing film to a plasma comprising one or more dopant molecules comprising one or more of C, B, O, N and Ge.
A method of depositing a C-doped SiN or SiON film on a substrate, the method comprising:
- depositing SiN or SiON film on the substrate via atomic layer deposition or plasma-enhanced atomic layer deposition;
- and
- doping the SiN or SiON film with C via a plasma implantation process to provide a doped film.
Dependencies are inferred from the claim text.