Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus, comprising:

• a process chamber configured to accommodate a substrate;
• a precursor gas supply system configured to supply a precursor gas containing a predetermined element and a halogen element into the process chamber;
• a reaction gas supply system configured to supply a reaction gas including an organic borazine compound into the process chamber;
• a carbon-containing gas supply system configured to supply a carbon-containing gas into the process chamber;
• a heater configured to heat the substrate in the process chamber;
• a pressure adjuster configured to adjust an internal pressure of the process chamber;
• and
• a controller configured to control the precursor gas supply system, the reaction gas supply system, the carbon-containing gas supply system, the heater, and the pressure adjuster so as to form a thin film having a borazine ring skeleton and containing the predetermined element, boron, carbon, and nitrogen on the substrate by performing a cycle a predetermined number of times, the cycle comprising:
• supplying the precursor gas to the substrate in the process chamber;
• supplying the reaction gas to the substrate in the process chamber;
• and
• supplying the carbon-containing gas to the substrate in the process chamber,
• wherein the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained.

A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a thin film having a borazine ring skeleton and containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle comprising:

• supplying a precursor gas containing the predetermined element and a halogen element to the substrate in a process chamber;
• supplying a reaction gas including an organic borazine compound to the substrate in the process chamber;
• and
• supplying a carbon-containing gas to the substrate in the process chamber,
• wherein the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained.