Parallel plate dry etching apparatus and method for manufacturing semiconductor device using same

A method for manufacturing a semiconductor device comprising dry-etching a surface of a substrate to be processed using a parallel plate dry etching apparatus,

• the apparatus including a lower electrode having an upper surface in a flat plate form, a substrate being to be mounted on the upper surface in the flat plate form, and the substrate being to be processed;
• an upper electrode having a lower surface in a flat plate form opposed to the upper surface of the lower electrode and having a plurality of etching gas supply ports in the lower surface;
• a reaction chamber including the lower electrode and the upper electrode in its interior and having an exhaust port to exhaust the etching gas to an opposite side of the lower electrode against the upper electrode;
• a flow guide plate disposed in a ring form in an upper portion of a space between a side wall of the reaction chamber and a side wall of the lower electrode, the flow guide plate having a plurality of vent holes to pass through the etching gas, and the flow guide plate surrounding the substrate;
• and a pair of shield plates disposed to face the flow guide plate in the space, the pair of shield plates blocking the etching gas passing through part of the plurality of vent holes, and the pair of shield plates facing the lower electrode in a first direction parallel to the upper surface of the lower electrode,
• the substrate having a mask pattern in a striped configuration,
• the method including etching the surface of the substrate using the apparatus while mounting the substrate on the upper surface of the lower electrode in such a manner that a direction in which a stripe of the mask pattern extends is orthogonal to the first direction in the apparatus.