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AssigneeASM IP Holding B.V.
InventorsAntti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
Estimating the term…
Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
A method of depositing a silicon nitride thin film on a substrate in a reaction space comprising:
An atomic layer deposition (ALD) method for forming a silicon nitride thin film, the method comprising a plurality of cycles, each cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase pulse of a silicon reactant and a second reactant, wherein the silicon reactant comprises a precursor having the following formula:
Dependencies are inferred from the claim text.