Method of Fabricating a FinFET Device

A method of forming a semiconductor device, the method comprising:

• receiving a substrate having a plurality of layers;
• depositing an etch stop layer over the substrate and a dummy mandrel layer over the etch stop layer;
• forming a plurality of hard mask patterns using a hard mask layer deposited over the dummy mandrel layer, wherein the hard mask patterns include a first dimension adjusted by a predetermined value;
• depositing a first spacer layer over the hard mask patterns, wherein the first spacer layer includes a first thickness adjusted by the predetermined value;
• forming a plurality of spacer fins including a space and a width by using the hard mask patterns, wherein the space is a function of the first dimension and the width is a function of the first thickness;
• performing a first fin cut process to remove at least one spacer fin;
• adjusting the width to a target dimension by depositing a second spacer layer over the spacer fins, wherein the second spacer layer includes a second thickness controlled by the predetermined value;
• performing a second fin cut process;
• and
• forming a plurality of fin structures in the substrate.

A method of forming a fin structure, the method comprising:

• receiving a substrate having a plurality of layers;
• depositing an etch stop layer over the substrate and a dummy mandrel layer over the etch stop layer;
• forming a plurality of hard mask patterns using a hard mask layer disposed over the dummy mandrel layer, wherein the hard mask patterns include a first dimension increased by a predetermined value;
• depositing a first spacer layer over the hard mask patterns, wherein the first spacer layer includes a first thickness decreased by the predetermined value;
• forming a plurality of spacer fins including a space and a width, wherein the space is increased by the predetermined value and the width is decreased by the predetermined value;
• performing a first fin cut process to remove at least one spacer fin by using a first resist pattern;
• adjusting the width to a target dimension by depositing a second spacer layer over the spacer fins, wherein the second spacer layer includes a second thickness determined by the predetermined value;
• performing a second fin cut process by using a second resist pattern;
• and
• forming a plurality of fin structures in the substrate by using the spacer fins.