Methods of forming trench/hole type features in a layer of material of an integrated circuit product
AssigneesGlobalfoundries Inc., International Business Machines Corporation, Renesas Electronics Corporation
InventorsLinus Jang, Yoshinori Matsui, Chiahsun Tseng
Life of this patent
Estimating the term…
Abstract
One illustrative method disclosed herein involves forming a layer of insulating material, forming a patterned layer of photoresist above the layer of insulating material, wherein the patterned layer of photoresist has an opening defined therein, forming an internal spacer within the opening in the patterned layer of photoresist, wherein the spacer defines a reduced-size opening, performing an etching process through the reduced-size opening on the layer of insulating material to define a trench/hole type feature in the layer of insulating material, and forming a conductive structure in the trench/hole type feature in the layer of insulating material.
Claims18
A method, comprising:
- forming a layer of insulating material;
- forming a patterned layer of photoresist above said layer of insulating material, said patterned layer of photoresist having an opening defined therein;
- forming an internal spacer within said opening in said patterned layer of photoresist, wherein said spacer defines a reduced-size opening;
- performing an etching process through said reduced-size opening on said layer of insulating material to define a trench/hole type feature in said layer of insulating material;
- and
- forming a conductive structure in said trench/hole type feature in said layer of insulating material.
A method, comprising:
- forming a layer of insulating material;
- forming a layer of photoresist above said layer of insulating material;
- exposing said layer of photoresist material;
- developing said exposed layer of photoresist material using a positive tone developer, said layer of photoresist having an opening defined therein;
- forming an internal spacer within said opening in said layer of photoresist, wherein said spacer defines a reduced-size opening;
- performing a positive etch bias etching process through said reduced-size opening on said layer of insulating material to define a trench/hole type feature in said layer of insulating material, wherein said trench/hole type feature has outwardly tapered sidewalls;
- and
- forming a conductive structure in said trench/hole type feature in said layer of insulating material.
A method, comprising:
- forming a layer of insulating material;
- forming a layer of photoresist above said layer of insulating material;
- exposing said layer of photoresist material;
- developing said exposed layer of photoresist material using a positive tone developer, said layer of photoresist having an opening defined therein;
- forming an internal spacer within said opening in said layer of photoresist, wherein said spacer defines a reduced-size opening;
- performing an etching process with a substantially zero etch bias through said reduced-size opening on said layer of insulating material to define a trench/hole type feature in said layer of insulating material, wherein said trench/hole type feature has substantially vertically oriented sidewalls;
- and
- forming a conductive structure in said trench/hole type feature in said layer of insulating material.
Dependencies are inferred from the claim text.