US 2014/0273438 A1 · CU/BARRIER INTERFACE ENHANCEMENT

Abstract

Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.

Claims15

Dependent claims

A method for processing a substrate, comprising:

providing a substrate comprising a conductive surface and a dielectric surface;
depositing a cobalt layer over the conductive surface;
flowing a silicon based compound over the cobalt layer to form a cobalt silicide layer;
and
depositing a dielectric barrier layer over the cobalt silicide layer.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/180,054Filed 13 Feb 2014

Priority

12 Mar 2013

Published

18 Sep 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10P 14/432
Chemical deposition, e.g. chemical vapour deposition [CVD]: using selective deposition
H10W 20/037
In openings in dielectrics: the barrier, adhesion or liner layers being on top of a main fill metal
H10W 20/0372
The barrier, adhesion or liner layers being on top of a main fill metal: comprising multiple barrier, adhesion or liner layers
H10W 20/0523
By treatments not introducing additional elements therein: by irradiating with ultraviolet or particle radiation

Cu/barrier interface enhancement

Life of this patent

Cu/barrier interface enhancement

Life of this patent

Abstract

Claims15