Ion implantation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsNai-Han Cheng, Chi-Ming Yang
Life of this patent
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Abstract
One or more techniques or systems for ion implantation are provided herein. A pressure control module is configured to maintain a substantially constant pressure within an ion implantation or process chamber. Pressure is maintained based on an attribute of an implant layer, pressure data, feedback, photo resist (PR) outgassing, a PR coating rate, a space charge effect associated with the implant layer, etc. By maintaining pressure within the process chamber, effects associated with PR outgassing are mitigated, thereby mitigating neutralization of ions. By maintaining charged ions, better control over implantation of the ions is achieved, thus allowing ions to be implanted at a desired depth.
Claims20
A method of ion implantation, comprising:
- accelerating one or more ions to a first energy level;
- implanting at least some of the one or more ions into a wafer;
- and
- maintaining a substantially constant pressure within a process chamber for implanting at least some of the one or more ions, wherein the substantially constant pressure is determined based on an attribute of a layer of the wafer being implanted with at least some of the one or more ions.
An ion beam implant system, comprising:
- an implant module configured to accelerate one or more ions of an ion source to a first energy level;
- a decel module downstream of the implant module configured to decelerate at least some of the one or more ions to a second energy level;
- a mass separator downstream of the implant module configured to filter one or more particles from the one or more ions;
- a process chamber downstream of the mass separator configured to receive at least some of the one or more ions;
- and
- a pressure control module configured to maintain a substantially constant pressure within the process chamber based on an attribute of a layer of a wafer being implanted with at least some of the one or more ions.
An ion beam implant system, comprising:
- an implant module configured to accelerate one or more ions of an ion source to a first energy level, the implant module comprising one or more lenses configured to focus at least some of the one or more ions into an ion beam;
- a decel module downstream of the implant module configured to decelerate at least some of the one or more ions of the ion beam to a second energy level;
- a process chamber downstream of the decel module configured to receive at least some of the one or more ions of the ion beam;
- a pressure control module configured to maintain a substantially constant pressure within the process chamber;
- and
- a controller configured to select the substantially constant pressure from a vacuum pressure database, said selection based on properties of an implant layer.
Dependencies are inferred from the claim text.