Method of forming a semiconductor structure including a metal-insulator-metal capacitor

A method, comprising:

• forming a layer of an electrically insulating material over a semiconductor structure, said semiconductor structure comprising an electrically conductive line comprising a metal;
• forming a recess in said layer of electrically insulating material;
• depositing a capacitor layer stack over said layer of electrically insulating material, said capacitor layer stack comprising one or more bottom electrode layers comprising at least one of a metal and a metal compound, a dielectric layer and a top electrode layer comprising at least one of a metal and a metal compound, wherein said capacitor layer stack has a thickness corresponding to a depth of said recess;
• performing a chemical mechanical polishing process, said chemical mechanical polishing process removing a first portion of said capacitor layer stack over a portion of said layer of electrically insulating material adjacent said recess, wherein at least a substantial part of a second portion of said capacitor layer stack in said recess is not removed;
• and
• after the chemical mechanical polishing process, performing a photolithography process, said photolithography process patterning said second portion of said capacitor layer stack.