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US 2014/0273391 A1Published application
Inductive element with interrupter region and method for forming
AssigneeFreescale Semiconductor, Inc.
InventorsErtugrul Demircan, Thomas F. McNelly
Life of this patent
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Abstract
A semiconductor device structure a semiconductor substrate having a first conductivity type and a top surface. A plurality of first doped regions is at a first depth below the top surface arranged in a checkerboard fashion. The first doped regions are of a second conductivity type. A dielectric layer is over the top surface. An inductive element is over the dielectric layer, wherein the inductive element is over the first doped regions.
Claims9
1-11. (canceled)
A method of forming a semiconductor device structure using a semiconductor substrate having a top surface, comprising:
- performing a patterned implant to form a plurality of first doped regions at a first depth below the top surface arranged in a checkerboard fashion, wherein the first doped regions are of a second conductivity type;
- forming a dielectric layer over the top surface;
- and
- forming an inductive element over the dielectric layer, wherein the inductive element is over the first doped regions.
1 more element
19-20. (canceled)
Dependencies are inferred from the claim text.