Method Of Making High-Voltage MOS Transistors With Thin Poly Gate
OwnerChien-Sheng Su, Jeng-Wei Yang +2inventors
InventorsChien-Sheng Su, Jeng-Wei Yang, Mandana Tadayoni, Yueh-Hsin Chen
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Abstract
A method of forming an MOS transistor by forming a poly gate over and insulated from a substrate, forming a layer of protective insulation material on the poly gate, and then performing a first implant of dopant material into portions of the substrate adjacent the poly gate, wherein the layer of protective insulation material and the poly gate block most or all of the first implant from reaching a portion of the substrate underneath the poly gate. One or more spacers are then formed adjacent the poly gate, followed by a second implant of dopant material into portions of the substrate adjacent to the one or more spacers.
Claims12
A method of forming an MOS transistor, comprising:
- forming a first insulation layer on a substrate;
- forming a poly layer on the first insulation layer;
- forming a second insulation layer on the poly layer;
- selectively removing portions of the second insulation layer and the poly layer to create a poly gate from the poly layer and a layer of protective insulation on the poly gate from the second insulation layer;
- performing a first implant of dopant material into portions of the substrate adjacent the poly gate, wherein the protective insulation and poly gate block most or all of the first implant from reaching a portion of the substrate underneath the poly gate;
- forming one or more spacers adjacent the poly gate;
- and
- performing a second implant of dopant material into portions of the substrate adjacent to the one or more spacers.
A method of forming an MOS transistor, comprising:
- providing a substrate;
- forming a poly gate over and insulated from the substrate;
- forming a layer of protective insulation material on the poly gate;
- performing a first implant of dopant material, after the forming of the poly gate and layer of insulation material, into portions of the substrate adjacent the poly gate, wherein the layer of protective insulation material and the poly gate block most or all of the first implant from reaching a portion of the substrate underneath the poly gate;
- forming one or more spacers adjacent the poly gate;
- and
- performing a second implant of dopant material into portions of the substrate adjacent to the one or more spacers.
Dependencies are inferred from the claim text.