Method of manufacture of advanced heterojunction transistor and transistor laser
OwnerMattew H. Kiminventor
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Abstract
Methods of manufacture of advanced heterojunction transistors and transistor lasers, and their related structures, are described herein. Other embodiments are also disclosed herein.
Claims46
A heterojunction bipolar transistor comprising:
- a GeSn base region.
The heterojunction bipolar transistor of claim 9, wherein the InGaP is ordered.
A method of manufacturing a heterojunction bipolar transistor comprising:
- forming a GeSn base region.
A device comprising:
- a first heterojunction bipolar transistor comprising a PNP device having a first GeSn base;
- and
- a second heterojunction bipolar transistor comprising an NPN device having a second GeSn base,
- wherein the first and second heterojunction bipolar transistors are located over a common substrate.
A method of manufacturing a device comprising:
- forming a first heterojunction bipolar transistor comprising a PNP device having a first GeSn base;
- and
- forming a second heterojunction bipolar transistor comprising an NPN device having a second GeSn base,
- wherein forming the first and second heterojunction bipolar transistors occur simultaneously with each other over a common substrate.
A device comprising:
- a first bipolar transistor comprising a first GeSn base;
- and
- a second bipolar transistor comprising a second GeSn base,
- wherein the first and second bipolar transistors are complementary devices and are located over a common substrate.
A method of manufacturing a device comprising:
- forming a first bipolar transistor comprising a first GeSn base;
- and
- forming a second bipolar transistor comprising a second GeSn base,
- wherein forming the first and second bipolar transistors occur simultaneously with each other over a common substrate.
A bipolar transistor comprising:
- a GeSn base region.
A method of manufacturing a bipolar transistor, the method comprising:
- providing a GeSn base region.
A transistor laser comprising:
- a GeSn active region.
A method of forming a transistor laser, the method comprising:
- forming a GeSn active region.
Dependencies are inferred from the claim text.