Techniques for processing photoresist features using ions
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsFrank Sinclair, Ludovic Godet, Patrick M. Martin, Armah Kpissay
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Abstract
A method of treating a substrate includes directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in the one or more photoresist features, the altered surface layer encapsulating an inner portion of the one or more photoresist features, and directing second ions different from the first ions over a second range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features.
Claims20
A method of treating a substrate, comprising:
- directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in a surface region of the one or more photoresist features, the altered layer encapsulating an inner portion of the one or more photoresist features;
- and
- directing second ions different from the first ions over a second range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features.
A method of reducing roughness in patterned photoresist layers on a substrate, comprising:
- directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in the one or more photoresist features, the altered layer forming an encapsulating layer that surrounds an inner portion of the one or more photoresist features;
- and
- after the directing the first ions, directing second ions different from the first ions over a second range of angles different from the first range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features.
Dependencies are inferred from the claim text.