Method Of Fabricating Mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAnthony Yen, Chih-Tsung Shih, Ming-Jiun Yao, Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Hsin-Chang Lee
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Abstract
A method for fabricating an extreme ultraviolet (EUV) mask includes providing a low thermal expansion material (LTEM) layer. A reflective multiple-layer (ML) is deposited over the LTEM layer. A flowable-photosensitive-absorption-layer (FPhAL) is spin coated over the reflective ML. The FPhAL is patterned by a lithography process to form a patterned absorption layer.
Claims20
A method for fabricating an extreme ultraviolet (EUV) mask, the method comprising:
- providing a low thermal expansion material (LTEM) layer;
- forming a reflective multiple-layer (ML) over the LTEM layer;
- forming a conductive layer over an opposite surface of the LTEM layer;
- spin-coating a flowable-photosensitive-absorption-layer (FPhAL) over the reflective ML;
- and
- patterning the FPhAL by a lithography process to form a patterned absorption layer having a first region and a second region, wherein the FPhAL is removed in the first region and remains in the second region.
A method for fabricating an extreme ultraviolet (EUV) mask, the method comprising:
- providing a low thermal expansion material (LTEM) layer;
- forming a reflective multiple-layer (ML) over the LTEM layer;
- forming a conductive layer over an opposite surface of the LTEM layer;
- forming a trench in the reflective ML;
- spin-coating a flowable absorption layer (FAL) to fill in the trench;
- and
- recessing the FAL so that the FAL outside the trench is removed and an absorption structure is formed in the trench.
A method for fabricating an extreme ultraviolet (EUV) mask, the method comprising:
- providing a low thermal expansion material (LTEM) layer;
- depositing a reflective multiple-layer (ML) over the LTEM layer;
- forming a conductive layer over an opposite surface of the LTEM layer;
- depositing a capping layer over the reflective ML;
- spin-coating a flowable-photosensitive-absorption-layer (FPhAL) over the reflective ML;
- exposing the FPhAL by a radiation;
- and
- developing the FPhAL by a developer to define a first region and a second region, wherein in the first region, the exposed FPhAL remains, while in the second region, the unexposed FPhAL is removed.
Dependencies are inferred from the claim text.