Extreme Ultraviolet Light (EUV) Photomasks, and Fabrication Methods Thereof

An extreme ultraviolet photomask, comprising:

• a reflective layer over a substrate;
• a capping layer over the reflective layer;
• and
• an absorber in the capping layer and the reflective layer, wherein a portion of absorber in the capping is wider than a portion of absorber within the reflective layer.

A method for forming an integrated circuit comprising:

• forming a photomask by
• forming a reflective layer over a substrate;
• forming a capping layer over the reflective layer;
• and
• forming an absorber in the capping layer and the reflective layer, wherein a portion of the absorber in the capping layer is wider than a portion of the absorber within the reflective layer;
• forming a layer on a substrate;
• and
• patterning the layer using the photomask in a photolithography step.