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US 2014/0272678 A1Published application
Structure and Method for Reflective-Type Mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Wei-Hung Liu, Chia-Chen Chen, Chi-Lun Lu, Anthony Yen
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Abstract
The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer formed on the substrate; a capping layer formed on the reflective multilayer and having a hardness greater than about 8; and an absorber layer formed on the capping layer and patterned according to an integrated circuit layout.
Claims20
A reflective mask, comprising:
- a substrate;
- a reflective multilayer formed on the substrate;
- a capping layer formed on the reflective multilayer and having a hardness greater than about 8;
- and
- an absorber layer formed on the capping layer and patterned according to an integrated circuit layout.
2 more elements
A reflective mask, comprising:
- a substrate;
- a reflective multilayer formed on the substrate;
- a capping layer of a material formed on the reflective multilayer;
- an absorber layer formed on the capping layer;
- and
- a protective layer of the material formed on the absorber layer, wherein the absorber layer and the protective layer are both patterned according to an integrated circuit layout.
3 more elements
A method for forming an integrated circuit comprising:
- forming a material layer over a substrate;
- forming a photoresist layer over the material layer;
- and
- patterning the photoresist layer using a photomask in a photolithography process, wherein the photomask includes
- a substrate;
- a reflective multilayer over the substrate;
- a capping layer over the reflective multilayer and having a hardness greater than about 8;
- and
- an absorber layer formed on the capping layer and patterned according to an integrated circuit layout.
6 more elements
Dependencies are inferred from the claim text.