Technique for Repairing an EUV Photo-Mask

A computer system, comprising:

• at least one processor;
• at least one memory;
• and
• at least one program module, the program module stored in the memory and configured to be executed by the processor to calculate a modification to a reflective photo-mask, the program module including:
• instructions for receiving information specifying a defect associated with a recessed area on a top surface of the reflective photo-mask;
• and
• instructions for calculating the modification to the reflective photo-mask, wherein the modification includes a negative feature in which one or more pairs of layers in a multilayer stack in the reflective photo-mask are removed using a subtractive fabrication process, and wherein the modification is proximate to the recessed area.

A reflective photo-mask, comprising:

• a substrate;
• a multilayer stack disposed on the substrate;
• an absorption layer disposed on a top surface of the multilayer stack;
• and
• a fabricated negative feature in which one or more pairs of layers in a multilayer stack in the reflective photo-mask are removed, wherein the fabricated negative feature is proximate to a recessed area on a top surface of the reflective photo-mask that is associated with a defect in the reflective photo-mask.