Loading patent…
AssigneeSaint-Gobain Ceramics & Plastics, Inc.
InventorsMarc Ouellette, Joseph M. Collins, John Walter Locher, Guilford L. Mack, III, Abbie M. Jennings, Jan J. Buzniak, Christopher D. Jones
Estimating the term…
The present disclosure is directed to an apparatus and method for forming sapphire ribbons via Edge-Defined Film-Fed Growth (EFG). Further, the present disclosure is directed to a plurality of concurrently grown sapphire ribbons having features such as a low dimensional variability and elimination of voiding between the sapphire ribbons concurrently grown in a batch.
A batch of at least six concurrently EFG grown sapphire ribbons, wherein at least six of the at least six EFG grown sapphire ribbons have a total thickness variation of no greater than 10%.
A batch of at least six concurrently EFG grown sapphire ribbons, wherein at least six of the sapphire ribbons in the batch are essentially free of voids.
A sapphire ribbon grown from an outer die in an EFG growth apparatus configured to simultaneously produce at least six sapphire ribbons, wherein the sapphire ribbon grown from the outer die has a thickness variation within 10% of the average thickness of each inner sapphire ribbon produced simultaneously with the sapphire ribbon grown from the outer die.
Dependencies are inferred from the claim text.