Adhesion improvement between cvd dielectric film and cu substrate

A method of depositing a dielectric layer comprising:

• positioning a copper substrate in a process chamber;
• delivering an adhesion plasma to the copper substrate to at least form a copper compound on the surface of the substrate, wherein the adhesion plasma comprises at least one compound-forming gas;
• and
• flowing a deposition gas into the process chamber to deposit a dielectric layer over the copper compound by chemical vapor deposition, wherein the flow between the adhesion plasma and the deposition gas is continuous.

A method of depositing a dielectric layer comprising:

• precleaning a substrate in a processing region of a processing chamber, the substrate comprising copper;
• forming an plasma using an adhesion gas in the processing region, the adhesion gas comprising a compound-forming gas;
• delivering the adhesion plasma to the substrate to at least form a copper compound on the surface of the substrate;
• transitioning the adhesion gas to a deposition gas, wherein the plasma is maintained;
• and
• depositing a dielectric layer over the copper compound by plasma enhanced chemical vapor deposition, wherein the flow between the adhesion plasma and the deposition gas is continuous.