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US 2014/0271916 A1Published application
Multivalence photocatalytic semiconductor elements
AssigneeNitto Denko Corporation
InventorsEkambaram Sambandan, Bin Zhang
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Abstract
Described herein are elements comprising a p-type semiconductor comprising mixed valence oxide compounds and an n-type semiconductor having a deeper valence band than the p-type semiconductor valence bands wherein the semiconductor types are in ionic communication with each other. The elements enhance photocatalytic activity.
Claims20
An element comprising:
- at least one p-type semiconductor comprising mixed valence oxide compounds, the compound having p-type conduction bands and p-type valence bands;
- and
- at least one n-type semiconductor having a deeper valence band than the p-type semiconductor valence bands, the n-type semiconductor in ionic charge communication with the mixed valence oxide compounds.
Dependencies are inferred from the claim text.