Copper alloy for electronic device, method for producing copper alloy for electronic device, and copper alloy rolled material for electronic device

A copper alloy for an electronic device,

• wherein the copper alloy is composed of a ternary alloy of Cu, Mg, and Zn,
• the ternary alloy comprises Mg at a content in a range of 3.3 to 6.9 atomic % and Zn at a content in a range of 0.1 to 10 atomic %, with a remainder being Cu and inevitable impurities, and
• a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic % and the content of Zn is given as B atomic %,
• σ≦{1.7241/(X′+Y′+1.7)}×100
• X′=−0.0292×A2+0.6797×A
• Y′=−0.0038×B2+0.2488×B.

A copper alloy for an electronic device,

• wherein the copper alloy is composed of a ternary alloy of Cu, Mg, and Zn,
• the ternary alloy comprises Mg at a content in a range of 3.3 to 6.9 atomic % and Zn at a content in a range of 0.1 to 10 atomic %, with a remainder being Cu and inevitable impurities,
• a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic % and the content of Zn is given as B atomic %, and
• with regard to scanning electron microscope observation, an average number of intermetallic compounds having grain sizes of 0.1 μm or more is in a range of 1/μm2 or less,
• σ≦{1.7241/(X′+Y′+1.7)}×100
• X′=−0.0292×A2+0.6797×A
• Y′=−0.0038×B2+0.2488×B.