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US 2014/0235043 A1Published application
Method for forming fin-shaped structure
AssigneeUnited Microelectronics Corp.
InventorsChien-Ting Lin, Shih-Hung Tsai
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Abstract
A method for forming a fin-shaped structure includes the following steps. A pad layer is formed on a substrate. A sacrificial pattern is formed on the pad layer. A spacer is formed on the pad layer beside the sacrificial pattern, wherein the ratio of the height of the spacer to the pad layer is larger than 5. The sacrificial pattern is removed. The layout of the spacer is transferred to the substrate to form at least a fin-shaped structure having a taper profile in the substrate.
Claims17
A method for forming a fin-shaped structure, comprising:
- forming a pad layer on a substrate;
- forming a sacrificial pattern on the pad layer;
- forming a spacer on the pad layer beside the sacrificial pattern,
- wherein the ratio of the height of the spacer to the pad layer is larger than 5;
- removing the sacrificial pattern;
- and
- transferring the layout of the spacer into the substrate to form at least a fin-shaped structure having a taper profile in the substrate.
4 more elements
Dependencies are inferred from the claim text.