Non-conventional method of silicon wafer sawing using a plurality of wafer saw rotational angles
AssigneeMicrochip Technology Incorporated
InventorsMatthew Bunker, Ekgachai Kenganantanon, Surapol Sawatjeen
Life of this patent
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Abstract
A silicon wafer saw can be set to either three or four different cutting angle orientations from a zero degree reference to produce integrated circuit dice having corners greater than 90 degrees. Three different saw angle orientations will produce six sided dice, and four different saw cutting angle orientations will produce eight sided dice.
Claims20
A method for separating a plurality of integrated circuit dice from a silicon wafer, said method comprising the steps of:
- setting a wafer cutting tool to a first cutting angle, wherein the first cutting angle is at substantially 90 degrees from a zero degree reference;
- cutting the entire silicon wafer with the wafer cutting tool at the first cutting angle;
- setting the wafer cutting tool to a second cutting angle, wherein the second cutting angle is less than 90 degrees from the zero degree reference;
- cutting the entire silicon wafer with the wafer cutting tool at the second cutting angle;
- setting the wafer cutting tool to a third cutting angle, wherein the third cutting angle is greater than 90 degrees from the zero degree reference;
- and
- cutting the entire silicon wafer with the wafer cutting tool at the third cutting angle;
- wherein a plurality of integrated circuit dice are separated from the silicon wafer and each one of the plurality of integrated circuit dice have six sides with corners greater than 90 degrees.
A method for separating a plurality of integrated circuit dice from a silicon wafer, said method comprising the steps of:
- setting a wafer cutting tool to a first cutting angle, wherein the first cutting angle is at substantially 90 degrees from a zero degree reference;
- cutting the entire silicon wafer with the wafer cutting tool at the first cutting angle;
- setting the wafer cutting tool to a second cutting angle, wherein the second cutting angle is less than 90 degrees from the zero degree reference;
- cutting the entire silicon wafer with the wafer cutting tool at the second cutting angle;
- setting the wafer cutting tool to a third cutting angle, wherein the third cutting angle is greater than 90 degrees from the zero degree reference;
- cutting the entire silicon water with the wafer cutting tool at the third cutting angle;
- setting the wafer cutting tool to a fourth cutting angle, wherein the fourth cutting angle is at substantially the zero degree reference;
- and
- cutting the entire silicon wafer with the wafer cutting tool at the fourth cutting angle;
- wherein a plurality of integrated circuit dice are separated from the silicon wafer and each one of the plurality of integrated circuit dice have eight sides with corners greater than 90 degrees.
A method for separating a plurality of integrated circuit dice from a silicon wafer, said method comprising the steps of:
- setting a wafer cutting saw to a first cutting angle to cut along a first cutting line, wherein the first cutting angle is at substantially 90 degrees from a zero degree reference;
- performing a continuous cut through the silicon wafer along the first cutting line with the wafer cutting saw;
- setting the wafer cutting saw to a second cutting angle to cut along a second cutting line, wherein the second cutting angle is less than 90 degrees from the zero degree reference;
- performing a continuous cut through the silicon wafer along the second cutting line with the wafer cutting tool;
- setting the wafer cutting tool to a third cutting angle to cut along a third cutting line, wherein the third cutting angle is greater than 90 degrees from the zero degree reference;
- and
- performing a continuous cut through the silicon wafer along the third cutting line with the wafer cutting tool;
- wherein a plurality of integrated circuit dice are separated from the silicon wafer and each one of the plurality of integrated circuit dice have six sides with corners greater than 90 degrees.
Dependencies are inferred from the claim text.