Method for producing transparent soi wafer

A method for producing a transparent SOI wafer, the method comprising the steps of:

• bonding a surface of a silicon wafer used as a donor wafer and a surface of a transparent handle wafer together to obtain a bonded wafer;
• heat-treating the bonded wafer at a first temperature of 150 to 300° C. as a first heat treatment;
• cutting off an unbonded portion of the bonded wafer by irradiating a visible light laser from a silicon wafer side of the heated bonded wafer to a boundary between the bonded surface and an unbonded circumferential surface, while keeping an angle of 60 to 90° between an incident light of the laser and a radial direction of the silicon wafer;
• subjecting the silicon wafer of the bonded wafer having the unbonded portion cut off to grinding, polishing, or etching to form a silicon film;
• and
• heat-treating the bonded wafer having the silicon film formed at a second temperature of 300 to 500° C. as a second heat treatment which is higher than the first temperature.