Back side illumination (bsi) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods

A method of manufacturing a back side illumination (BSI) sensor, the method comprising:

• providing a workpiece having a front side and a back side opposite the front side;
• forming an integrated circuit comprising an array of back side illumination sensors within the workpiece;
• forming a first insulating material over the back side of the workpiece;
• forming a second insulating material over the first insulating material;
• patterning the second insulating material to form a grid on the back side of the workpiece;
• forming a third insulating material over the patterned second insulating material and exposed portions of the first insulating material, wherein the third insulating material comprises a portion of the grid;
• forming a color filter material over the grid;
• and
• forming a lens material over the color filter material.

A back side illumination (BSI) sensor, comprising:

• a workpiece having a front side and a back side opposite the front side, the workpiece including an array of back side illumination sensors;
• a first insulating material disposed over the back side of the workpiece;
• a grid disposed over the first insulating material, the grid comprising a plurality of members, the grid comprising a patterned second insulating material and a third insulating material disposed over the patterned second insulating material;
• a color filter material disposed over a portion of the first insulating material between the plurality of members of the grid;
• and
• a lens material disposed over the color filter material.