US 2014/0235007 A1 · METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND CHEMICAL VAPOR DEPOSITION APPARATUS

Abstract

A method of manufacturing a semiconductor light emitting device, includes sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer. The forming of the light emitting layer includes a first growth process, a second growth process and a transfer process. The first growth process uses a first susceptor having a mounting surface with a first curvature. The second growth process uses a second susceptor having a mounting surface with a second curvature different from the first curvature. The transfer process transfers the substrate from the first susceptor to the second susceptor between the first and second growth processes.

Claims20

Dependent claims

A method of manufacturing a semiconductor light emitting device, the method comprising:

sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer,
wherein the forming of the light emitting layer comprises a first growth process using a first susceptor having a mounting surface with a first curvature, a second growth process using a second susceptor having a mounting surface with a second curvature different from the first curvature, and a transfer process of transferring the substrate from the first susceptor to the second susceptor between the first and second growth processes.

Dependencies are inferred from the claim text.

Facts

Application

14/146,477Filed 2 Jan 2014

Priority

KR 10-2013-001631415 Feb 2013

Published

21 Aug 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10H 20/01335
With a substrate not being Group III-V materials: the light-emitting regions comprising nitride materials
C23C 16/4583
Rigid and flat substrates, e.g. plates or discs: the substrate being supported substantially horizontally
C23C 16/54
Characterised by the method of coating: apparatus specially adapted for continuous coating
H10P 72/15
Using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]: horizontal carrier comprising wall type elements whereby the…

Method of manufacturing semiconductor light emitting device and chemical vapor deposition apparatus

Life of this patent

Method of manufacturing semiconductor light emitting device and chemical vapor deposition apparatus

Life of this patent

Abstract

Claims20