Reflective mask blank for euv lithography, and reflective layer-coated substrate for euv lithography

A reflective mask blank for EUV lithography (EUVL), comprising a substrate, a reflective layer for reflecting EUV light, formed on the substrate, and an absorber layer for absorbing EUV light, formed on the reflective layer, wherein

• the reflective layer comprises a second multilayer reflective film having a second low refractive index layer and a second high refractive index layer alternately stacked plural times on the substrate, an adjustment layer stacked on the second multilayer reflective film, and a first multilayer reflective film having a Mo layer and a Si layer alternately stacked plural times on the adjustment layer;
• in the first multilayer reflective film, from 20 to 36 sets are stacked in such a relation that the first cycle length d1 being the total thickness of one set of adjacent Mo layer and Si layer is 6.8 nm≦d1≦7.2 nm;
• in the adjustment layer, a Mo layer and a Si layer are alternately stacked in at least one set, the total thickness d3 of adjacent Mo layer and Si layer satisfies d3≦0.8d1 or 1.2d1≦d3, and the thickness L of the entire adjustment layer is (0.3+i)d1≦L≦(0.7+Dd1, wherein i is an integer greater than or equal to 0;
• in the second multilayer reflective film, from 3 to 31 sets are stacked in such a relation that the second cycle length d2 being the total thickness of one set of adjacent Mo layer and Si layer is 0.9d1≦d2≦1.1d1;
• the ratio of the thickness of a Mo layer in the first multilayer reflective film to the first cycle length d1 is from 0.25 to 0.55;
• the ratio of the thickness of a Mo layer in the second multilayer reflective film to the second cycle length d2 is from 0.25 to 0.55;
• and
• the total thickness of the reflective layer is at most 600 nm.