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US 2014/0233596 A1Published application
Semiconductor lasers and etched-facet integrated devices having non-uniform trenches
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsRuiyu Fang, Giammarco Rossi, Roberto Paoletti
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Abstract
An edge-emitting etched-facet optical semiconductor structure includes a substrate, an active multiple quantum well (MQW) region formed on the substrate, a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet disposed in a first window and a waveguide second etched end facet disposed in a second window, and first and second trenches having non-uniform widths extending in substantially the longitudinal direction between the first and second windows.
Claims16
An edge-emitting optical semiconductor device, comprising:
- a substrate;
- a first active multiple quantum well (MQW) region formed on the substrate;
- and
- a first ridge waveguide extending in substantially a longitudinal direction between a first waveguide first etched end facet and a first waveguide second etched end facet, the first ridge waveguide formed in a surface of the substrate over the first active MQW region, the first waveguide first and second etched end facets having optical coatings;
- wherein the first waveguide first etched end facet is disposed in a first window, and the first waveguide second etched end facet is disposed in a second window, the first and second windows extending in a depth direction from the first ridge waveguide to the substrate and through the first active MQW region, a first waveguide first trench extending in substantially the longitudinal direction between the first and second windows and extending in a depth direction from the first ridge waveguide to the substrate and through the first active MQW region, the first waveguide first trench being wider at a mid-portion of the first waveguide first trench than at end portions of the first waveguide first trench, a first waveguide second trench extending in substantially the longitudinal direction between the first and second windows and extending in a depth direction from the first ridge waveguide to the substrate and through the first active MQW region, the first waveguide second trench being wider at a mid-portion of the first waveguide second trench than at end portions of the first waveguide second trench, the first ridge waveguide extending between the first waveguide first trench and the first waveguide second trench.
2 more elements
A method for fabricating an edge-emitting optical semiconductor device, comprising:
- forming an active multiple quantum well (MQW) region on a substrate;
- forming a first mask over the active MQW region, the first mask defining a ridge waveguide region extending in substantially a longitudinal direction between a waveguide first end and a waveguide second end;
- forming a ridge waveguide corresponding to the ridge waveguide region using the first mask;
- forming a second mask over the ridge waveguide;
- performing a first removal process through the second mask to remove portions of the active MQW region down to the substrate to form first and second trenches, the first trench being wider at a mid-portion of the first trench than at end portions of the first trench, the second trench being wider at a mid-portion of the second trench than at end portions of the second trench;
- removing the first and second masks after performing the first removal process;
- forming a third mask over the ridge waveguide and the first and second trenches after removing the first and second masks;
- performing a second removal process through the third mask to remove portions of the MQW region down to the substrate to form first and second windows, the first window having a first etched end facet, the second window having a second etched end facet, the first and second trenches extending in substantially the longitudinal direction between the first and second windows, the ridge waveguide extending in substantially the longitudinal direction between the first etched end facet and the second etched end facet and between the first and second trenches;
- removing the third mask after performing the second removal process;
- and
- applying an optical coating on the first and second etched end facets after removing the third mask.
8 more elements
Dependencies are inferred from the claim text.