System for semiconductor device characterization using reflectivity measurement

A system including a non-transitory, computer-readable medium that stores a plurality of instructions for execution by at least one computer processor, wherein the instructions include instructions to:

• receive a plurality of reflectivity amounts associated with a semiconductor wafer;
• determine a spatial distance for a selected reflectivity change using the plurality of reflectivity amounts, wherein the spatial distance defines a distance across the semiconductor wafer within which the selected reflectivity change occurs;
• compare the spatial distance with a thermal diffusion length associated with a first type of anneal process technique;
• and
• select the first type of anneal process technique from a plurality of anneal process techniques based on the comparison of the spatial distance and the thermal diffusion length.

A system, comprising:

• a wafer stage suitable for holding a semiconductor wafer;
• a light source suitable for delivering a radiation beam to the semiconductor wafer disposed in the wafer stage;
• a reflectivity measurement tool suitable for measuring a plurality of reflectivity measurements of reflectivity of the radiation beam from the light source after the radiation beam contacts various points on the semiconductor wafer;
• and
• a non-transitory, computer-readable medium that stores a plurality of instructions for execution by at least one computer processor, wherein the instructions include instructions to:
• receive the plurality of reflectivity measurements of from the reflectivity measurement tool;
• generate a reflectivity map based on the received plurality of reflectivity measurement;
• receive a reflectivity change amount, wherein the reflectivity change amount is a percentage of variation of reflectivity;
• and
• determine a spatial distance within which the received reflectivity change is provided by using the generated reflectivity map, wherein the spatial distance corresponds to a length of a surface of the semiconductor wafer;
• and
• select a process to perform on the semiconductor wafer based on the determined spatial distance.