Semiconductor gate structure for threshold voltage modulation and method of making same

A semiconductor device, comprising:

• an intermediate structure of a semiconductor device, comprising a n-type transistor and p-type transistor;
• a dielectric layer comprising at least one dielectric material over the n-type transistor and p-type transistor;
• a first work function layer comprising a first work function material lacking aluminum that has been annealed over only the dielectric layer above the n-type transistor;
• a second work function layer comprising an unannealed second work function material lacking aluminum over the first work function layer and the dielectric layer over the p-type transistor;
• and
• a conducting layer comprising a conducting material over the second work function layer.

A semiconductor device, comprising:

• an intermediate structure of a semiconductor device, comprising a n-type transistor and p-type transistor;
• a dielectric mixture layer over only the n-type transistor that has been annealed, the mixture comprising a hafnium-based dielectric material and a lanthanum-based dielectric material;
• a first dielectric layer comprising the hafnium-based dielectric material over the p-type transistor only;
• a first work function layer comprising a transition metal nitride lacking aluminum that has been annealed over only the dielectric mixture layer;
• a second work function layer comprising a transition metal nitride lacking aluminum over the first work function layer and the first dielectric layer;
• and
• a conducting layer comprising a conducting material over the third work function layer.