Super Junction Semiconductor Device with a Nominal Breakdown Voltage in a Cell Area

A super junction semiconductor device, comprising:

• a super junction structure formed in a semiconductor body with a first surface and a second surface parallel to the first surface, the super junction structure comprising first areas of a first conductivity type and second areas of a second conductivity type opposite the first conductivity type, a first electrode structure directly adjoining the first surface and a second electrode structure directly adjoining the second surface,
• wherein the super junction semiconductor device is configured to accommodate a voltage applied between the first and second electrode structures predominantly in a vertical direction perpendicular to the first surface in a cell area and predominantly in a lateral direction in an edge area surrounding the cell area,
• wherein along a vertical section of the super junction structure in the cell area a compensation between the first and second areas is nominally stronger de-tuned in one of the first and second portions than in the other.