Super Junction Semiconductor Device Comprising Implanted Zones

A super junction semiconductor device comprising:

• a semiconductor portion with a first surface and a second surface parallel to the first surface, the semiconductor portion comprising
• a drain layer of a first conductivity type located in a cell area and absent in an edge area surrounding the cell area;
• and
• columnar first super junction regions of a second, opposite conductivity type extending in a direction perpendicular to the first surface and separated by columnar second super junction regions of the first conductivity type, the first and second super junction regions forming a super junction structure between the first surface and the drain layer, wherein a distance between the first super junction regions and the second surface does not exceed 30 μm.

A method of manufacturing a super junction semiconductor device, the method comprising:

• forming, in a semiconductor portion with a first surface and a working surface parallel to the first surface, columnar first and second super junction regions of opposite first and second conductivity types, the first and second super junction regions extending in a direction perpendicular to the surfaces and forming a super junction structure;
• thinning the semiconductor portion from the working surface to obtain a second surface such that a distance between the first super junction regions having the second conductivity type and the second surface does not exceed 30 μm;
• and
• implanting, into the second surface, impurities of a first conductivity type to form one or more implanted zones extending at least between the super junction structure and the second surface at least in a cell area.