Semiconductor device
AssigneeX-Fab Semiconductor Foundries AG
InventorsYong Hun Jeong, Bui Ngo Bong, Yen Thing Tay, Iliyana Manso
Life of this patent
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Abstract
A trench MOSFET including: an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the trench; and polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface; where the first and second interfaces are substantially aligned or are at substantially the same level.
Claims29
A trench MOSFET comprising:
- an epitaxial layer;
- a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface;
- a trench;
- a trench bottom oxide in the trench;
- and
- polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface;
- wherein the first and second interfaces are substantially aligned or are at substantially the same level.
A method of filling a trench of a semiconductor device comprising:
- depositing a first material in the trench including the sidewall of the trench so as to form at least one overhang portion, wherein the first material leaves a void in the trench, the void having a first cross sectional area at a first level of the at least one overhang portion, and a second cross sectional area at a second, deeper level in the trench, wherein the first cross sectional area is smaller than the second cross sectional area;
- at least partially removing the at least one overhang portion;
- and
- depositing a second material in the trench.
A semiconductor device comprising a trench having a convex trench bottom oxide.
A semiconductor device comprising a trench which is substantially completely filled and having a width of less than 0.25 μm, wherein a trench bottom oxide is located in the trench.
Dependencies are inferred from the claim text.