Non-volatile memory

Abstract

A non-volatile memory is provided. The non-volatile memory includes a oxide and polysilicon stack structure and charge storage layers. The oxide and polysilicon stack structure is disposed on a substrate. There are recesses in the substrate at two sides of the oxide and polysilicon stack structure. The oxide and polysilicon stack structure includes an oxide layer and a polysilicon layer. The oxide layer is disposed on the substrate, wherein there is an interface between the oxide layer and the substrate. The polysilicon layer is disposed on the oxide layer. The charge storage layers are disposed in the recesses and extend to a side wall of the oxide and polysilicon stack structure, and a top surface of each of the charge storage layers is higher than the interface.

Dependencies are inferred from the claim text.