Methods of manufacturing three-dimensional semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsJaegoo LEE, Byungkwan YOU, Youngwoo PARK, Kwang Soo SEOL
Life of this patent
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Abstract
Methods of manufacturing three-dimensional semiconductor devices that may include forming a first spacer on a sidewall inside a first opening formed in a first stack structure, forming a sacrificial filling pattern on the spacer to fill the first opening, forming a second stack structure including a second opening exposing the sacrificial filling pattern on the first stack structure, forming a second spacer on a sidewall inside the second opening, removing the sacrificial filling pattern and removing the first spacer and the second spacer.
Claims12
1-21. (canceled)
A three-dimensional semiconductor device,
- a first structure including a plurality of first gate patterns vertically stacked on a substrate;
- a first active pattern passing through the first structure to contact the substrate;
- a second structures including a plurality of second gate patterns vertically stacked on the first structure;
- and
- a second active pattern passing through the second structure to contact the first active pattern;
- wherein a top width of the first active pattern is greater than of a bottom width of the second active pattern.
A three-dimensional semiconductor device,
- a first structure including a plurality of first gate patterns vertically stacked on a substrate;
- a second structures including a plurality of second gate patterns vertically stacked on the first structure;
- and
- a plurality of active patterns passing through the first and the second structures to contact the substrate, each of the active patterns including a first portion disposed in the first structure and a second portion disposed in the second structure,
- wherein a sidewall of each of the active patterns has an inflection point between the first portion and the second portion.
Dependencies are inferred from the claim text.