Magneto-Electric Voltage Controlled Spin Transistors
AssigneesQuantum Devices, Inc., University of North Texas
InventorsJeffry A. Kelber, Christian Binek, Peter Arnold Bowden, Kirill Belashchenko
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Abstract
The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
Claims8
A magneto-electric spin field effect transistor (spin-FET) comprising:
- a layer of a magneto-electric gate dielectric,
- a thin film of a conductive channel material selected from the group consisting of graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof;
- wherein said magneto-electric gate film and said channel material are in intimate contact along an interface there between,
- a source and drain disposed in electrical contact with said thin film of channel material.
A non-volatile memory device, where no refresh current is required to retain the last state written.
A FET with multistate logic.
Dependencies are inferred from the claim text.