DIAMOND GaN DEVICES AND ASSOCIATED METHODS
OwnerChien-Min Sunginventor
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Abstract
Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer to a substantially flat surface, depositing a buffer layer on the working surface of the diamond layer, and depositing a semiconductor layer on the buffer layer. In one specific aspect, the c-axis of the buffer layer is oriented perpendicular to the working surface of the diamond layer.
Claims18
A method of making a semiconductor device, comprising:
- polishing a working surface of a diamond layer to a substantially flat surface;
- depositing a buffer layer on the working surface of the diamond layer;
- and
- depositing a semiconductor layer on the buffer layer.
A method for making a semiconductor device, comprising;
- polishing a working surface of a diamond layer to a substantially flat surface;
- depositing a buffer layer on the working surface of the diamond layer;
- depositing a GaN material on the buffer layer to form a plurality of GaN islands;
- and
- growing the plurality of GaN islands in directions parallel to and perpendicular to the buffer layer to form a GaN layer.
A method for making a semiconductor device, comprising;
- polishing a working surface of a diamond layer to a substantially flat surface;
- depositing a GaN material on the working surface of the diamond layer to form a plurality of GaN islands;
- and
- growing the plurality of GaN islands in directions parallel to and perpendicular to the working surface of the diamond layer to form a GaN layer.
A diamond semiconductor device, comprising:
- a p-type doped diamond layer having a polished working surface;
- a buffer layer disposed on the polished working surface of the diamond layer;
- and
- an n-type doped semiconductor layer disposed on the buffer layer.
Dependencies are inferred from the claim text.